PART |
Description |
Maker |
UPD23C64300F9-XXX-BC3 UPD23C64300 UPD23C64300F9-BC |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) 6400位掩膜可编程ROM00万字位(字节模式 4分字6位(字模式) CAP 3.6PF 16V /-0.1PF THIN-FILM SN90/PB10/NI 30PPM TR-7-PA
|
NEC, Corp. NEC Corp. NEC[NEC]
|
M2V64S20BTP M2V64S20BTP-10 M2V64S20BTP-10L M2V64S2 |
64M bit Synchronous DRAM 4-BANK x 2097152-WORD x 8-BIT 4-BANK x 1048576-WORD x 16-BIT 4-BANK x 4194304-WORD x 4-BIT From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
UPD23C64040JLGX-XXX UPD23C64080JLGY-XXX-MKH |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE 6400位掩膜可编程ROM00万字位(字节模式 4分字6位(字模式)页面访问模式
|
http:// NEC, Corp. NEC Corp.
|
UPD23C64040JL UPD23C64040JLGX-XXX UPD23C64040JLGY- |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC[NEC]
|
MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
UPD23C64000JLGX-XXX UPD23C64000JLGY-XXX-MKH |
Multiconductor Cable; Number of Conductors:2; Conductor Size AWG:12; No. Strands x Strand Size:7 x 20; Jacket Material:FRPE - Flame Retardant Polyethylene; Leaded Process Compatible:Yes; Capacitance:40uF; Conductor Material:Copper RoHS Compliant: Yes 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) 6400位掩膜可编程ROM00万字位(字节模式 4分字6位(字模式)
|
NEC Corp. NEC, Corp.
|
MR27V6452DMA MR27V6452D |
4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
|
MB82DP04184E-65LTBG MB82DP04184E-65L |
64M Bit (4 M word 】 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Media Devices Limited
|
M2V64S20BTP-6 M2V64S20TP M2V64S30BTP-6 M2V64S30TP |
From old datasheet system 4-BANK x 2097152-WORD x 8-BIT 64M bit Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
MR53V1652J |
1,048,576-Word X 16-Bit or 2,097,152-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM From old datasheet system
|
OKI
|
MR53V8052J-XXMA MR53V8052J-XXRA MR53V8052J-XXTP MR |
524,288-Word x 16-bit or 1,048,576-Word x 8-bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM
|
OKI[OKI electronic componets]
|